L14F1 Phototransistor

Description

• Phototransistor Type: L14F1 is a silicon NPN phototransistor.
• Sensitivity: Sensitive to visible and near-infrared light.
• Wavelength Range: Typically responds to light in the 400nm to 1100nm range.
• Amplification: Amplifies and responds to changes in incident light intensity.
• Collector Current: Produces a collector current proportional to incident light.
• Applications: Used in various light sensing and detection applications.
• Package Type: Typically housed in a TO-18 metal can package.
• Compact Design: Small and easy to integrate into circuits and devices.
• High Gain: Offers high current gain when exposed to light.
• Low Dark Current: Exhibits low current in the absence of light.
• Quick Response: Provides a rapid response to changes in light intensity.
• Wide Operating Temperature Range: Suitable for a variety of environments.
• Widely Available: Commonly used in electronics and sensor applications.