2N7000 FET – N-Channel Enhancement Mode FET TO-92 Package (Pack Of 5)

Description

• Transistor Type: N-Channel Enhancement Mode Field-Effect Transistor (FET).
• Polarity: N-Channel FETs are commonly used for switching and amplification applications.
• Drain-Source Voltage (VDS): Rated at a maximum of 60V, indicating the maximum voltage it can handle between the drain and source terminals.
• Drain Current (ID): Rated for currents up to 200mA (milliamperes).
• Gate-Source Voltage (VGS): Typically requires a voltage of around 3V to 5V to turn the FET on.
• On-State Resistance (RDS(on)): Typically in the range of a few ohms when fully turned on, indicating low conduction resistance.
• Package Type: Housed in a TO-92 package, suitable for through-hole mounting on a circuit board.
• Temperature Range: Suitable for operation within a specified temperature range, typically -55°C to 150°C.
• Durability: Designed to withstand typical operating conditions.