• High Ruggedness

• Simple drive requirements

• High safe operating area

• For low distortion complementary designs

• Easy to carry and handle

• Collector-Emitter Volt (Vceo): 50V
• Collector Current (Ic): 0.10A
• hfe: 90-160 @ 1mA
• Power Dissipation (Ptot): 250mW
• Current-Gain-Bandwidth (ftotal):150MHz
• Type: NPN
• 2SC945 - NPN Transistor General purpose transistor (Pack Of 5)

• Power Rated at Economical Prices 

• Practical Level Triggering and Holding Characteristics

• Flat, Rugged, Thermo pad Construction High Heat Dissipation and Sensitive Gate Triggering 

• These are Pb—Free Device' 

• Glassivated Surface for Reliability and Uniformity 

• Advanced process technology

• Low error voltage

• Fast switching speed

• Full-voltage operation

• High power and current handling capability