IRF540N – IRF540 N-Channel MOSFET Transistor (TO-220)

SKU: 000841
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36.00 Original price was: ₹36.00.22.00Current price is: ₹22.00.
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  • Drain-Source Volt (Vds): 100V
  • Drain-Gate Volt (Vdg): 100V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 30A
  • Power Dissipation (Ptot): 150W
  • Type: N-Channel

Description

  • MOSFET Type: N-channel MOSFETs are typically used to control the flow of current between the source and drain terminals when a voltage is applied to the gate terminal. The IRF540N is an N-channel MOSFET, which means it conducts current when a positive voltage is applied to its gate relative to its source terminal.
  • Voltage Rating: The IRF540N is known for its relatively high voltage rating. It can handle a maximum drain-source voltage of up to 100 volts, which makes it suitable for applications requiring high voltage switching.
  • Current Rating: It has a reasonably high continuous drain current rating of around 33 amperes (33A). This indicates its ability to handle substantial current loads.
  • Package Type: The IRF540N is typically available in a TO-220 package. The TO-220 package is a common through-hole package with a metal tab for efficient heat dissipation. This allows for easy mounting on a heatsink, making it suitable for power applications.
  • Applications: N-channel MOSFETs like the IRF540N are used in various applications, including motor control, power amplification, voltage regulation, and switching circuits.
  • Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is the voltage required to turn the MOSFET on. For the IRF540N, this value typically falls within the range of 2 to 4 volts.
  • On-Resistance: The on-resistance (Rds(on)) of the IRF540N can vary, but it is generally relatively low for its current and voltage ratings. A lower Rds(on) value means less power dissipation when the MOSFET is on.
  • Heat Dissipation: Due to the higher current and voltage ratings of the IRF540N, efficient heat dissipation is important, and it’s common to use a heatsink when using this MOSFET in high-power applications.

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