FGA25N120 High Voltage 1200v fast IGBT Power Transistor

SKU: 000960
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129.00 Original price was: ₹129.00.89.00Current price is: ₹89.00.
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  • Collector-Emitter Voltage : 1200V
  • Gate-Emitter Voltage : ±20V
  • Minimum Gate-Emitter threshold Voltage : 3.5V
  • Maximum Gate-Emitter threshold Voltage : 7.5V
  • Typical Gate-Emitter threshold Voltage : 5.5V
  • Collector to Emitter Saturation Voltage : 2V-2.65V( Varies with Temp. , Current and Voltage conditions)
  • Collector Current : 50A at 25°C, 25A at 50°C
  • Maximum Pulsed Collector Current : 90A
  • Diode Continuous Forward Current : 25A

Description

  1. NPN Transistor: The D2498 is an NPN transistor, which means it amplifies signals and allows current to flow from the collector to the emitter when a small current is applied to the base.
  2. Horizontal Deflection: In CRT displays, the horizontal deflection stage is responsible for controlling the horizontal positioning of the electron beam, which scans across the screen to create the image. The D2498 is used in this stage to handle the high currents and voltages required for rapid horizontal scanning.
  3. High Voltage and Current Handling: It is designed to handle high voltages and currents, which are necessary for driving the horizontal deflection coils in CRT displays.
  4. Triple Diffused: The “triple diffused” terminology indicates that the transistor’s manufacturing process involves multiple diffusions of doping materials, which can improve the transistor’s performance and power-handling capabilities.
  5. Commonly Used in CRT Displays: The D2498 transistor is a common component in older CRT televisions and monitors, where it plays a critical role in generating the horizontal scanning signal.
  6. Three Pins: It typically has three pins – the base, collector, and emitter. The base pin is used to control the current flow between the collector and emitter, affecting the horizontal deflection of the electron beam.

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